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GaN Vertical Transistors with Staircase Channels for High-Voltage Applications
In this study, we propose and simulate the design of a non-regrowth staircase channel GaN vertical trench transistor, demonstrating an exceptional threshold and breakdown characteristic for high power and high frequency applications. The unique staircase design provides a variable capacitance throug...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9865230/ https://www.ncbi.nlm.nih.gov/pubmed/36676318 http://dx.doi.org/10.3390/ma16020582 |