Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons

The effect of thermally generated equilibrium carrier distribution on the vacancy generation, recombination, and mobility in a semiconductor heterostructure with an undoped quantum well is studied. A different rate of thermally generated equilibrium carriers in layers with different band gaps at ann...

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Detalles Bibliográficos
Autores principales: Shamirzaev, Timur S., Atuchin, Victor V., Zhilitskiy, Vladimir E., Gornov, Alexander Yu.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9865270/
https://www.ncbi.nlm.nih.gov/pubmed/36678062
http://dx.doi.org/10.3390/nano13020308

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9865270/
https://www.ncbi.nlm.nih.gov/pubmed/36678062
http://dx.doi.org/10.3390/nano13020308

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