Electromechanically Coupled III-N Quantum Dots

We exploit the three-dimensional (3D) character of the strain field created around InGaN islands formed within the multilayer structures spaced by a less than 1-nm-thick GaN layer for the creation of spatially correlated electronically coupled quantum dots (QDs). The laterally inhomogeneous vertical...

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Detalles Bibliográficos
Autores principales: Barettin, Daniele, Sakharov, Alexei V., Tsatsulnikov, Andrey F., Nikolaev, Andrey E., Cherkashin, Nikolay
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9865564/
https://www.ncbi.nlm.nih.gov/pubmed/36677994
http://dx.doi.org/10.3390/nano13020241

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9865564/
https://www.ncbi.nlm.nih.gov/pubmed/36677994
http://dx.doi.org/10.3390/nano13020241

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