Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is f...

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Detalles Bibliográficos
Autores principales: Zhang, Shengtao, Fu, Guoqing, Cai, Hongda, Yang, Junzhi, Fan, Guofeng, Chen, Yanyu, Li, Tie, Zhao, Lili
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9867089/
https://www.ncbi.nlm.nih.gov/pubmed/36676509
http://dx.doi.org/10.3390/ma16020767

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9867089/
https://www.ncbi.nlm.nih.gov/pubmed/36676509
http://dx.doi.org/10.3390/ma16020767

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