Deep-learning-based precise characterization of microwave transistors using fully-automated regression surrogates

Accurate models of scattering and noise parameters of transistors are instrumental in facilitating design procedures of microwave devices such as low-noise amplifiers. Yet, data-driven modeling of transistors is a challenging endeavor due to complex relationships between transistor characteristics a...

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Detalles Bibliográficos
Autores principales: Calik, Nurullah, Güneş, Filiz, Koziel, Slawomir, Pietrenko-Dabrowska, Anna, Belen, Mehmet A., Mahouti, Peyman
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9879951/
https://www.ncbi.nlm.nih.gov/pubmed/36702862
http://dx.doi.org/10.1038/s41598-023-28639-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9879951/
https://www.ncbi.nlm.nih.gov/pubmed/36702862
http://dx.doi.org/10.1038/s41598-023-28639-4

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