Selective-Area, Water-Free Atomic Layer Deposition of Metal Oxides on Graphene Defects

[Image: see text] Passivating defective regions on monolayer graphene with metal oxides remains an active area of research for graphene device integration. To effectively passivate these regions, a water-free atomic layer deposition (ALD) recipe was developed and yielded selective-area ALD (sa-ALD)...

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Detalles Bibliográficos
Autores principales: Mazza, Michael F., Cabán-Acevedo, Miguel, Fu, Harold J., Meier, Madeline C., Thompson, Annelise C., Ifkovits, Zachary P., Carim, Azhar I., Lewis, Nathan S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9888651/
https://www.ncbi.nlm.nih.gov/pubmed/36855765
http://dx.doi.org/10.1021/acsmaterialsau.1c00049

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9888651/
https://www.ncbi.nlm.nih.gov/pubmed/36855765
http://dx.doi.org/10.1021/acsmaterialsau.1c00049

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