Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying

[Image: see text] Properties of Ge oxides are significantly different from those of widely used Si oxides. For example, the instability of GeO(x) at device junctions causes electronic defect levels that degrade the performance of Ge-containing devices (e.g., transistors and infrared detectors). Ther...

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Detalles Bibliográficos
Autores principales: Kuzmin, Mikhail, Lehtiö, Juha-Pekka, Rad, Zahra Jahanshah, Sorokina, Svetlana V., Punkkinen, Marko P. J., Hedman, Hannu-Pekka, Punkkinen, Risto, Laukkanen, Pekka, Kokko, Kalevi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9888653/
https://www.ncbi.nlm.nih.gov/pubmed/36855760
http://dx.doi.org/10.1021/acsmaterialsau.1c00039

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9888653/
https://www.ncbi.nlm.nih.gov/pubmed/36855760
http://dx.doi.org/10.1021/acsmaterialsau.1c00039

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