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Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying
[Image: see text] Properties of Ge oxides are significantly different from those of widely used Si oxides. For example, the instability of GeO(x) at device junctions causes electronic defect levels that degrade the performance of Ge-containing devices (e.g., transistors and infrared detectors). Ther...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9888653/ https://www.ncbi.nlm.nih.gov/pubmed/36855760 http://dx.doi.org/10.1021/acsmaterialsau.1c00039 |