Investigation of Different Oxygen Partial Pressures on MgGa(2)O(4)-Resistive Random-Access Memory

[Image: see text] Different oxygen partial-pressure MgGa(2)O(4)-resistive RAMs (RRAMs) are fabricated to investigate the resistive switching behaviors. The X-ray photoelectron spectroscopy results, set voltage, reset voltage, cycling endurance, and retention time are drawn for comparison. With the i...

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Detalles Bibliográficos
Autores principales: Kao, Yu-Neng, Huang, Wei-Lun, Chang, Sheng-Po, Lai, Wei-Chih, Chang, Shoou-Jinn
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9893462/
https://www.ncbi.nlm.nih.gov/pubmed/36743031
http://dx.doi.org/10.1021/acsomega.2c04222

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9893462/
https://www.ncbi.nlm.nih.gov/pubmed/36743031
http://dx.doi.org/10.1021/acsomega.2c04222

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