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Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors

ABSTRACT: The idea of benefitting from the properties of III-V semiconductors and silicon on the same substrate has been occupying the minds of scientists for several years. Although the principle of III-V integration on a silicon-based platform is simple, it is often challenging to perform due to d...

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Detalles Bibliográficos
Autores principales: Hnida-Gut, Katarzyna E., Sousa, Marilyne, Tiwari, Preksha, Schmid, Heinz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9902586/
https://www.ncbi.nlm.nih.gov/pubmed/36746886
http://dx.doi.org/10.1186/s11671-023-03778-9