Cargando…

Effect of vacancy defects on the electronic and mechanical properties of two-dimensional MoSi(2)N(4)

MoSi(2)N(4) is a recently fabricated 2-dimensional indirect bandgap semiconductor material that has attracted interest in various fields due to its promising properties. A defect-based thorough and reliable investigation of its physical properties is indispensable in this regard to explore its indus...

Descripción completa

Detalles Bibliográficos
Autores principales: Dastider, Ankan Ghosh, Rasul, Ashiqur, Rahman, Ehsanur, Alam, Md. Kawsar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9912288/
https://www.ncbi.nlm.nih.gov/pubmed/36777947
http://dx.doi.org/10.1039/d2ra07483d