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Effect of vacancy defects on the electronic and mechanical properties of two-dimensional MoSi(2)N(4)
MoSi(2)N(4) is a recently fabricated 2-dimensional indirect bandgap semiconductor material that has attracted interest in various fields due to its promising properties. A defect-based thorough and reliable investigation of its physical properties is indispensable in this regard to explore its indus...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9912288/ https://www.ncbi.nlm.nih.gov/pubmed/36777947 http://dx.doi.org/10.1039/d2ra07483d |