High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy

Deep ultraviolet light-emitting diodes have attracted considerable attention for realizing virus inactivation applications. The UV-LEDs use the AlN underlying layer and the plane sapphire substrate. However, the low growth temperature in AlN underlying layer is grown by limited growth temperature in...

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Detalles Bibliográficos
Autores principales: Nagamatsu, Kentaro, Miyagawa, Takumi, Tomita, Atsushi, Hirayama, Hideki, Takashima, Yuusuke, Naoi, Yoshiki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9913039/
https://www.ncbi.nlm.nih.gov/pubmed/36765074
http://dx.doi.org/10.1038/s41598-023-29150-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9913039/
https://www.ncbi.nlm.nih.gov/pubmed/36765074
http://dx.doi.org/10.1038/s41598-023-29150-6

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