Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates

The electrical characteristics of Schottky contacts on individual threading dislocations (TDs) with a screw-component in GaN substrates and the structures of these TDs were investigated to assess the effects of such defects on reverse leakage currents. Micrometer-scale platinum/GaN Schottky contacts...

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Detalles Bibliográficos
Autores principales: Hamachi, Takeaki, Tohei, Tetsuya, Hayashi, Yusuke, Imanishi, Masayuki, Usami, Shigeyoshi, Mori, Yusuke, Sakai, Akira
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9918472/
https://www.ncbi.nlm.nih.gov/pubmed/36765088
http://dx.doi.org/10.1038/s41598-023-29458-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9918472/
https://www.ncbi.nlm.nih.gov/pubmed/36765088
http://dx.doi.org/10.1038/s41598-023-29458-3

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