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Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates
The electrical characteristics of Schottky contacts on individual threading dislocations (TDs) with a screw-component in GaN substrates and the structures of these TDs were investigated to assess the effects of such defects on reverse leakage currents. Micrometer-scale platinum/GaN Schottky contacts...
Autores principales: | Hamachi, Takeaki, Tohei, Tetsuya, Hayashi, Yusuke, Imanishi, Masayuki, Usami, Shigeyoshi, Mori, Yusuke, Sakai, Akira |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9918472/ https://www.ncbi.nlm.nih.gov/pubmed/36765088 http://dx.doi.org/10.1038/s41598-023-29458-3 |
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