Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures

Recently, considerable attention has been paid to the development of advanced technologies such as artificial intelligence (AI) and big data, and high-density, high-speed storage devices are being extensively studied to realize the technology. Ferroelectrics are promising non-volatile memory materia...

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Detalles Bibliográficos
Autores principales: Kho, Wonwoo, Hwang, Hyunjoo, Kim, Jisoo, Park, Gyuil, Ahn, Seung-Eon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9918946/
https://www.ncbi.nlm.nih.gov/pubmed/36770400
http://dx.doi.org/10.3390/nano13030439

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9918946/
https://www.ncbi.nlm.nih.gov/pubmed/36770400
http://dx.doi.org/10.3390/nano13030439

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