The Relationship between Electron Transport and Microstructure in Ge(2)Sb(2)Te(5) Alloy

Phase-change random-access memory (PCRAM) holds great promise for next-generation information storage applications. As a mature phase change material, Ge(2)Sb(2)Te(5) alloy (GST) relies on the distinct electrical properties of different states to achieve information storage, but there are relatively...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Cheng, Zheng, Yonghui, Xin, Tianjiao, Zheng, Yunzhe, Wang, Rui, Cheng, Yan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9919368/
https://www.ncbi.nlm.nih.gov/pubmed/36770543
http://dx.doi.org/10.3390/nano13030582

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9919368/
https://www.ncbi.nlm.nih.gov/pubmed/36770543
http://dx.doi.org/10.3390/nano13030582

Ejemplares similares