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The Relationship between Electron Transport and Microstructure in Ge(2)Sb(2)Te(5) Alloy

Phase-change random-access memory (PCRAM) holds great promise for next-generation information storage applications. As a mature phase change material, Ge(2)Sb(2)Te(5) alloy (GST) relies on the distinct electrical properties of different states to achieve information storage, but there are relatively...

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Detalles Bibliográficos
Autores principales:	Liu, Cheng, Zheng, Yonghui, Xin, Tianjiao, Zheng, Yunzhe, Wang, Rui, Cheng, Yan
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Communication
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9919368/ https://www.ncbi.nlm.nih.gov/pubmed/36770543 http://dx.doi.org/10.3390/nano13030582

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