The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Here, we report on the epitaxial growth of GaN on patterned SiO(2)-covered cone-shaped patterned sapphire surfaces (PSS). Physical vapor deposition (PVD) AlN films were used as buffers deposited on the SiO(2)-PSS substrates. The gallium nitride (GaN) growth on these substrates at different alternati...

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Detalles Bibliográficos
Autores principales: Zhang, Yi, Zhu, Guangmin, Wang, Jiangbo, Le, Zichun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9921733/
https://www.ncbi.nlm.nih.gov/pubmed/36770112
http://dx.doi.org/10.3390/ma16031104

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9921733/
https://www.ncbi.nlm.nih.gov/pubmed/36770112
http://dx.doi.org/10.3390/ma16031104

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