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Poole–Frenkel (PF)-MOS: A Proposal for the Ultimate Scale of an MOS Transistor
This work reports, for the first time, the phenomenon of lateral Poole–Frenkel current conduction along the dielectric/Si interface of a silicon nanowire metal-oxide semiconductor (MOS) transistor. This discovery has a great impact on the study of device characteristic modeling and device reliabilit...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9921833/ https://www.ncbi.nlm.nih.gov/pubmed/36770374 http://dx.doi.org/10.3390/nano13030411 |