The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

The growth conditions of the AlGaN barrier in AlGaN/AlGaN deep ultra-violet (DUV) multiple quantum wells (MQWs) have crucial influences on the light output power of DUV light-emitting diodes (LEDs). The reduction of the AlGaN barrier growth rate improved the qualities of AlGaN/AlGaN MQWs, such as su...

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Detalles Bibliográficos
Autores principales: Wang, Tien-Yu, Lai, Wei-Chih, Xie, Qiao-Ju, Yang, Shun-Hao, Chang, Sheng-Po, Kuo, Cheng-Huang, Sheu, Jinn-Kong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9923460/
https://www.ncbi.nlm.nih.gov/pubmed/36793296
http://dx.doi.org/10.1039/d2ra07368d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9923460/
https://www.ncbi.nlm.nih.gov/pubmed/36793296
http://dx.doi.org/10.1039/d2ra07368d

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