Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applications

[Image: see text] We successfully demonstrated the improvement and stabilization of the electrical properties of a graphene field effect transistor by fabricating a sandwiched amorphous boron nitride (a-BN)/graphene (Gr)/a-BN using a directly grown a-BN film. The a-BN film was grown via low-pressure...

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Detalles Bibliográficos
Autores principales: Sattari-Esfahlan, Seyed Mehdi, Kim, Hyoung Gyun, Hyun, Sang Hwa, Choi, Jun-Hui, Hwang, Hyun Sik, Kim, Eui-Tae, Park, Hyeong Gi, Lee, Jae-Hyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9923684/
https://www.ncbi.nlm.nih.gov/pubmed/36719071
http://dx.doi.org/10.1021/acsami.2c18706

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9923684/
https://www.ncbi.nlm.nih.gov/pubmed/36719071
http://dx.doi.org/10.1021/acsami.2c18706

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