Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications

GaN is an important III–V semiconductor for a variety of applications owing to its large direct band gap. GaN nanowires (NWs) have demonstrated significant potential as critical building blocks for nanoelectronics and nanophotonic devices, as well as integrated nanosystems. We present a comprehensiv...

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Detalles Bibliográficos
Autores principales: Abdullah, Ameer, Kulkarni, Mandar A., Thaalbi, Hamza, Tariq, Fawad, Ryu, Sang-Wan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9926888/
https://www.ncbi.nlm.nih.gov/pubmed/36798492
http://dx.doi.org/10.1039/d2na00711h

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9926888/
https://www.ncbi.nlm.nih.gov/pubmed/36798492
http://dx.doi.org/10.1039/d2na00711h

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