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Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications
GaN is an important III–V semiconductor for a variety of applications owing to its large direct band gap. GaN nanowires (NWs) have demonstrated significant potential as critical building blocks for nanoelectronics and nanophotonic devices, as well as integrated nanosystems. We present a comprehensiv...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9926888/ https://www.ncbi.nlm.nih.gov/pubmed/36798492 http://dx.doi.org/10.1039/d2na00711h |