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Low-Temperature Direct Synthesis of Multilayered h-BN without Catalysts by Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition
[Image: see text] Low-temperature direct synthesis of thick multilayered hexagonal-boron nitride (h-BN) on semiconducting and insulating substrates is required to produce high-performance electronic devices based on two-dimensional (2D) materials. In this study, multilayered h-BN with a thickness ex...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9933473/ https://www.ncbi.nlm.nih.gov/pubmed/36816676 http://dx.doi.org/10.1021/acsomega.2c06757 |
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author | Yamamoto, Masaya Murata, Hiromasa Miyata, Noriyuki Takashima, Hiroshi Nagao, Masayoshi Mimura, Hidenori Neo, Yoichiro Murakami, Katsuhisa |
author_facet | Yamamoto, Masaya Murata, Hiromasa Miyata, Noriyuki Takashima, Hiroshi Nagao, Masayoshi Mimura, Hidenori Neo, Yoichiro Murakami, Katsuhisa |
author_sort | Yamamoto, Masaya |
collection | PubMed |
description | [Image: see text] Low-temperature direct synthesis of thick multilayered hexagonal-boron nitride (h-BN) on semiconducting and insulating substrates is required to produce high-performance electronic devices based on two-dimensional (2D) materials. In this study, multilayered h-BN with a thickness exceeding 5 nm was directly synthesized on quartz and Si at low temperatures, between 400 and 500 °C, by inductively coupled plasma-enhanced chemical vapor deposition using borazine as the precursor material. The quality and thickness of the h-BN crystals were investigated with respect to synthesis parameters, namely, temperature, radio frequency power, N(2) flow rate, and H(2) flow rate. Introducing N(2) and H(2) carrier gases critically affected the deposition rate, and increasing the carrier gas flow rate enhanced the h-BN crystal quality. The typical optical band gap of synthesized h-BN was approximately 5.8 eV, consistent with that of previous studies. The full width at half-maximum of the h-BN Raman peak was 32–33 cm(–1), comparable to that of commercially available multilayered h-BN on Cu foil. These results are expected to facilitate the development of 2D materials for electronics applications. |
format | Online Article Text |
id | pubmed-9933473 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-99334732023-02-17 Low-Temperature Direct Synthesis of Multilayered h-BN without Catalysts by Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition Yamamoto, Masaya Murata, Hiromasa Miyata, Noriyuki Takashima, Hiroshi Nagao, Masayoshi Mimura, Hidenori Neo, Yoichiro Murakami, Katsuhisa ACS Omega [Image: see text] Low-temperature direct synthesis of thick multilayered hexagonal-boron nitride (h-BN) on semiconducting and insulating substrates is required to produce high-performance electronic devices based on two-dimensional (2D) materials. In this study, multilayered h-BN with a thickness exceeding 5 nm was directly synthesized on quartz and Si at low temperatures, between 400 and 500 °C, by inductively coupled plasma-enhanced chemical vapor deposition using borazine as the precursor material. The quality and thickness of the h-BN crystals were investigated with respect to synthesis parameters, namely, temperature, radio frequency power, N(2) flow rate, and H(2) flow rate. Introducing N(2) and H(2) carrier gases critically affected the deposition rate, and increasing the carrier gas flow rate enhanced the h-BN crystal quality. The typical optical band gap of synthesized h-BN was approximately 5.8 eV, consistent with that of previous studies. The full width at half-maximum of the h-BN Raman peak was 32–33 cm(–1), comparable to that of commercially available multilayered h-BN on Cu foil. These results are expected to facilitate the development of 2D materials for electronics applications. American Chemical Society 2023-01-31 /pmc/articles/PMC9933473/ /pubmed/36816676 http://dx.doi.org/10.1021/acsomega.2c06757 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/). |
spellingShingle | Yamamoto, Masaya Murata, Hiromasa Miyata, Noriyuki Takashima, Hiroshi Nagao, Masayoshi Mimura, Hidenori Neo, Yoichiro Murakami, Katsuhisa Low-Temperature Direct Synthesis of Multilayered h-BN without Catalysts by Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition |
title | Low-Temperature
Direct Synthesis of Multilayered h-BN
without Catalysts by Inductively Coupled Plasma-Enhanced Chemical
Vapor Deposition |
title_full | Low-Temperature
Direct Synthesis of Multilayered h-BN
without Catalysts by Inductively Coupled Plasma-Enhanced Chemical
Vapor Deposition |
title_fullStr | Low-Temperature
Direct Synthesis of Multilayered h-BN
without Catalysts by Inductively Coupled Plasma-Enhanced Chemical
Vapor Deposition |
title_full_unstemmed | Low-Temperature
Direct Synthesis of Multilayered h-BN
without Catalysts by Inductively Coupled Plasma-Enhanced Chemical
Vapor Deposition |
title_short | Low-Temperature
Direct Synthesis of Multilayered h-BN
without Catalysts by Inductively Coupled Plasma-Enhanced Chemical
Vapor Deposition |
title_sort | low-temperature
direct synthesis of multilayered h-bn
without catalysts by inductively coupled plasma-enhanced chemical
vapor deposition |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9933473/ https://www.ncbi.nlm.nih.gov/pubmed/36816676 http://dx.doi.org/10.1021/acsomega.2c06757 |
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