Study of Optoelectronic Features in Polar and Nonpolar Polymorphs of the Oxynitride Tin-Based Semiconductor InSnO(2)N

[Image: see text] In view of its potential applicability in photoconversion processes, we here discuss the optoelectronic features of the recently proposed tin-based oxynitride material for (photo)catalysis, InSnO(2)N. In detail, by combining Density Functional and Many-Body Perturbation Theory, we...

Descripción completa

Detalles Bibliográficos
Autores principales: Palummo, Maurizia, Re Fiorentin, Michele, Yamashita, Koichi, Castelli, Ivano E., Giorgi, Giacomo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9940202/
https://www.ncbi.nlm.nih.gov/pubmed/36745501
http://dx.doi.org/10.1021/acs.jpclett.3c00211

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9940202/
https://www.ncbi.nlm.nih.gov/pubmed/36745501
http://dx.doi.org/10.1021/acs.jpclett.3c00211

Ejemplares similares