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Study of Optoelectronic Features in Polar and Nonpolar Polymorphs of the Oxynitride Tin-Based Semiconductor InSnO(2)N
[Image: see text] In view of its potential applicability in photoconversion processes, we here discuss the optoelectronic features of the recently proposed tin-based oxynitride material for (photo)catalysis, InSnO(2)N. In detail, by combining Density Functional and Many-Body Perturbation Theory, we...
Autores principales: | Palummo, Maurizia, Re Fiorentin, Michele, Yamashita, Koichi, Castelli, Ivano E., Giorgi, Giacomo |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9940202/ https://www.ncbi.nlm.nih.gov/pubmed/36745501 http://dx.doi.org/10.1021/acs.jpclett.3c00211 |
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