Performance improvement of a tunnel junction memristor with amorphous insulator film

This study theoretically demonstrated the oxygen vacancy (V(O)(2+))-based modulation of a tunneling junction memristor (TJM) with a high and tunable tunneling electroresistance (TER) ratio. The tunneling barrier height and width are modulated by the V(O)(2+)-related dipoles, and the ON and OFF-state...

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Detalles Bibliográficos
Autores principales: Liu, Fenning, Peng, Yue, Liu, Yan, Xiao, Wenwu, Hao, Yue, Han, Genquan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9944204/
https://www.ncbi.nlm.nih.gov/pubmed/36809397
http://dx.doi.org/10.1186/s11671-023-03800-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9944204/
https://www.ncbi.nlm.nih.gov/pubmed/36809397
http://dx.doi.org/10.1186/s11671-023-03800-0

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