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Performance improvement of a tunnel junction memristor with amorphous insulator film
This study theoretically demonstrated the oxygen vacancy (V(O)(2+))-based modulation of a tunneling junction memristor (TJM) with a high and tunable tunneling electroresistance (TER) ratio. The tunneling barrier height and width are modulated by the V(O)(2+)-related dipoles, and the ON and OFF-state...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9944204/ https://www.ncbi.nlm.nih.gov/pubmed/36809397 http://dx.doi.org/10.1186/s11671-023-03800-0 |