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Effects of Charge Traps on Hysteresis in Organic Field-Effect Transistors and Their Charge Trap Cause Analysis through Causal Inference Techniques
Hysteresis in organic field-effect transistors is attributed to the well-known bias stress effects. This is a phenomenon in which the measured drain-source current varies when sweeping the gate voltage from on to off or from off to on. Hysteresis is caused by various factors, and one of the most com...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959125/ https://www.ncbi.nlm.nih.gov/pubmed/36850862 http://dx.doi.org/10.3390/s23042265 |