Simulation of the Irradiation Cascade Effect of 6H-SiC Based on Molecular Dynamics Principles

When semiconductor materials are exposed to radiation fields, cascade collision effects may form between the radiation particles in the radiation field and the lattice atoms in the target material, creating irradiation defects that can lead to degradation or failure of the performance of the device....

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Detalles Bibliográficos
Autores principales: Chen, Yaolin, Liu, Hongxia, Gao, Tianzhi, Wei, Hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959228/
https://www.ncbi.nlm.nih.gov/pubmed/36838155
http://dx.doi.org/10.3390/mi14020455

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959228/
https://www.ncbi.nlm.nih.gov/pubmed/36838155
http://dx.doi.org/10.3390/mi14020455

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