The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb(2)Te(3)

As a new generation of non-volatile memory, phase change random access memory (PCRAM) has the potential to fill the hierarchical gap between DRAM and NAND FLASH in computer storage. Sb(2)Te(3), one of the candidate materials for high-speed PCRAM, has high crystallization speed and poor thermal stabi...

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Detalles Bibliográficos
Autores principales: Zhang, Jie, Rong, Ningning, Xu, Peng, Xiao, Yuchen, Lu, Aijiang, Song, Wenxiong, Song, Sannian, Song, Zhitang, Liang, Yongcheng, Wu, Liangcai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959287/
https://www.ncbi.nlm.nih.gov/pubmed/36839039
http://dx.doi.org/10.3390/nano13040671

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959287/
https://www.ncbi.nlm.nih.gov/pubmed/36839039
http://dx.doi.org/10.3390/nano13040671

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