Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT

This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear de...

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Detalles Bibliográficos
Autores principales: Jiang, Jie, Chen, Qiuqi, Hu, Shengdong, Shi, Yijun, He, Zhiyuan, Huang, Yun, Hui, Caixin, Chen, Yiqiang, Wu, Hao, Lu, Guoguang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959725/
https://www.ncbi.nlm.nih.gov/pubmed/36837114
http://dx.doi.org/10.3390/ma16041484

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959725/
https://www.ncbi.nlm.nih.gov/pubmed/36837114
http://dx.doi.org/10.3390/ma16041484

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