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Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT
This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear de...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959725/ https://www.ncbi.nlm.nih.gov/pubmed/36837114 http://dx.doi.org/10.3390/ma16041484 |
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author | Jiang, Jie Chen, Qiuqi Hu, Shengdong Shi, Yijun He, Zhiyuan Huang, Yun Hui, Caixin Chen, Yiqiang Wu, Hao Lu, Guoguang |
author_facet | Jiang, Jie Chen, Qiuqi Hu, Shengdong Shi, Yijun He, Zhiyuan Huang, Yun Hui, Caixin Chen, Yiqiang Wu, Hao Lu, Guoguang |
author_sort | Jiang, Jie |
collection | PubMed |
description | This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, punctate deformation, environmental temperature, electro-thermal coupling, thermo-mechanical coupling, and electro-thermo-mechanical coupling stresses were applied to the device. It was found that different kinds of stress had different influence mechanisms on the device. Namely, excessive mechanical pressure/deformation stress caused serious, irrecoverable degradation of the device’s leakage current, with the gate leakage current (I(g)) increasing by ~10(7) times and the drain-to-source leakage current (I(dss)) increasing by ~10(6) times after mechanical punctate deformation of 0.5 mm. The device characteristics were not restored after the mechanical stress was removed. Compared with three mechanical stresses, environmental thermal stress had a greater influence on the device’s transfer characteristic and on-resistance (R(on)) but far less influence on I(g) and I(dss). As was expected, multiple stress coupled to the device promoted invalidation of the device. For more in-depth investigation, finite element simulation carried out with COMSOL was used to analyze the effect of electro-thermo-mechanical coupling stress on top-cooled E-mode AlGaN/GaN HEMT. The results of the experiments and simulation demonstrated that single and coupled stresses, especially mechanical stress coupled with other stresses, degraded the electrical properties or even caused irreversible damage to top-cooled E-mode AlGaN/GaN HEMT. Mechanical stress should be reduced as much as possible in the packaging design, transportation, storage, and application of top-cooled E-mode AlGaN/GaN HEMT. |
format | Online Article Text |
id | pubmed-9959725 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-99597252023-02-26 Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT Jiang, Jie Chen, Qiuqi Hu, Shengdong Shi, Yijun He, Zhiyuan Huang, Yun Hui, Caixin Chen, Yiqiang Wu, Hao Lu, Guoguang Materials (Basel) Article This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, punctate deformation, environmental temperature, electro-thermal coupling, thermo-mechanical coupling, and electro-thermo-mechanical coupling stresses were applied to the device. It was found that different kinds of stress had different influence mechanisms on the device. Namely, excessive mechanical pressure/deformation stress caused serious, irrecoverable degradation of the device’s leakage current, with the gate leakage current (I(g)) increasing by ~10(7) times and the drain-to-source leakage current (I(dss)) increasing by ~10(6) times after mechanical punctate deformation of 0.5 mm. The device characteristics were not restored after the mechanical stress was removed. Compared with three mechanical stresses, environmental thermal stress had a greater influence on the device’s transfer characteristic and on-resistance (R(on)) but far less influence on I(g) and I(dss). As was expected, multiple stress coupled to the device promoted invalidation of the device. For more in-depth investigation, finite element simulation carried out with COMSOL was used to analyze the effect of electro-thermo-mechanical coupling stress on top-cooled E-mode AlGaN/GaN HEMT. The results of the experiments and simulation demonstrated that single and coupled stresses, especially mechanical stress coupled with other stresses, degraded the electrical properties or even caused irreversible damage to top-cooled E-mode AlGaN/GaN HEMT. Mechanical stress should be reduced as much as possible in the packaging design, transportation, storage, and application of top-cooled E-mode AlGaN/GaN HEMT. MDPI 2023-02-10 /pmc/articles/PMC9959725/ /pubmed/36837114 http://dx.doi.org/10.3390/ma16041484 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Jiang, Jie Chen, Qiuqi Hu, Shengdong Shi, Yijun He, Zhiyuan Huang, Yun Hui, Caixin Chen, Yiqiang Wu, Hao Lu, Guoguang Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT |
title | Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT |
title_full | Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT |
title_fullStr | Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT |
title_full_unstemmed | Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT |
title_short | Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT |
title_sort | effect of electro-thermo-mechanical coupling stress on top-cooled e-mode algan/gan hemt |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959725/ https://www.ncbi.nlm.nih.gov/pubmed/36837114 http://dx.doi.org/10.3390/ma16041484 |
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