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Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT

This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear de...

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Autores principales: Jiang, Jie, Chen, Qiuqi, Hu, Shengdong, Shi, Yijun, He, Zhiyuan, Huang, Yun, Hui, Caixin, Chen, Yiqiang, Wu, Hao, Lu, Guoguang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959725/
https://www.ncbi.nlm.nih.gov/pubmed/36837114
http://dx.doi.org/10.3390/ma16041484
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author Jiang, Jie
Chen, Qiuqi
Hu, Shengdong
Shi, Yijun
He, Zhiyuan
Huang, Yun
Hui, Caixin
Chen, Yiqiang
Wu, Hao
Lu, Guoguang
author_facet Jiang, Jie
Chen, Qiuqi
Hu, Shengdong
Shi, Yijun
He, Zhiyuan
Huang, Yun
Hui, Caixin
Chen, Yiqiang
Wu, Hao
Lu, Guoguang
author_sort Jiang, Jie
collection PubMed
description This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, punctate deformation, environmental temperature, electro-thermal coupling, thermo-mechanical coupling, and electro-thermo-mechanical coupling stresses were applied to the device. It was found that different kinds of stress had different influence mechanisms on the device. Namely, excessive mechanical pressure/deformation stress caused serious, irrecoverable degradation of the device’s leakage current, with the gate leakage current (I(g)) increasing by ~10(7) times and the drain-to-source leakage current (I(dss)) increasing by ~10(6) times after mechanical punctate deformation of 0.5 mm. The device characteristics were not restored after the mechanical stress was removed. Compared with three mechanical stresses, environmental thermal stress had a greater influence on the device’s transfer characteristic and on-resistance (R(on)) but far less influence on I(g) and I(dss). As was expected, multiple stress coupled to the device promoted invalidation of the device. For more in-depth investigation, finite element simulation carried out with COMSOL was used to analyze the effect of electro-thermo-mechanical coupling stress on top-cooled E-mode AlGaN/GaN HEMT. The results of the experiments and simulation demonstrated that single and coupled stresses, especially mechanical stress coupled with other stresses, degraded the electrical properties or even caused irreversible damage to top-cooled E-mode AlGaN/GaN HEMT. Mechanical stress should be reduced as much as possible in the packaging design, transportation, storage, and application of top-cooled E-mode AlGaN/GaN HEMT.
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spelling pubmed-99597252023-02-26 Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT Jiang, Jie Chen, Qiuqi Hu, Shengdong Shi, Yijun He, Zhiyuan Huang, Yun Hui, Caixin Chen, Yiqiang Wu, Hao Lu, Guoguang Materials (Basel) Article This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, punctate deformation, environmental temperature, electro-thermal coupling, thermo-mechanical coupling, and electro-thermo-mechanical coupling stresses were applied to the device. It was found that different kinds of stress had different influence mechanisms on the device. Namely, excessive mechanical pressure/deformation stress caused serious, irrecoverable degradation of the device’s leakage current, with the gate leakage current (I(g)) increasing by ~10(7) times and the drain-to-source leakage current (I(dss)) increasing by ~10(6) times after mechanical punctate deformation of 0.5 mm. The device characteristics were not restored after the mechanical stress was removed. Compared with three mechanical stresses, environmental thermal stress had a greater influence on the device’s transfer characteristic and on-resistance (R(on)) but far less influence on I(g) and I(dss). As was expected, multiple stress coupled to the device promoted invalidation of the device. For more in-depth investigation, finite element simulation carried out with COMSOL was used to analyze the effect of electro-thermo-mechanical coupling stress on top-cooled E-mode AlGaN/GaN HEMT. The results of the experiments and simulation demonstrated that single and coupled stresses, especially mechanical stress coupled with other stresses, degraded the electrical properties or even caused irreversible damage to top-cooled E-mode AlGaN/GaN HEMT. Mechanical stress should be reduced as much as possible in the packaging design, transportation, storage, and application of top-cooled E-mode AlGaN/GaN HEMT. MDPI 2023-02-10 /pmc/articles/PMC9959725/ /pubmed/36837114 http://dx.doi.org/10.3390/ma16041484 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Jiang, Jie
Chen, Qiuqi
Hu, Shengdong
Shi, Yijun
He, Zhiyuan
Huang, Yun
Hui, Caixin
Chen, Yiqiang
Wu, Hao
Lu, Guoguang
Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT
title Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT
title_full Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT
title_fullStr Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT
title_full_unstemmed Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT
title_short Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT
title_sort effect of electro-thermo-mechanical coupling stress on top-cooled e-mode algan/gan hemt
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959725/
https://www.ncbi.nlm.nih.gov/pubmed/36837114
http://dx.doi.org/10.3390/ma16041484
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