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Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT

This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear de...

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Detalles Bibliográficos
Autores principales:	Jiang, Jie, Chen, Qiuqi, Hu, Shengdong, Shi, Yijun, He, Zhiyuan, Huang, Yun, Hui, Caixin, Chen, Yiqiang, Wu, Hao, Lu, Guoguang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959725/ https://www.ncbi.nlm.nih.gov/pubmed/36837114 http://dx.doi.org/10.3390/ma16041484

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