Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells

GaN cap layer with different thicknesses was grown on each InGaN well layer during MOCVD growth for InGaN/GaN multiple quantum well (MQW) samples to study the influence of the cap layer on the photoluminescence (PL) characteristics of MQWs. Through the temperature-dependent (TD) PL spectra, it was f...

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Detalles Bibliográficos
Autores principales: Sun, Haoran, Chen, Yuhui, Ben, Yuhao, Zhang, Hongping, Zhao, Yujie, Jin, Zhihao, Li, Guoqi, Zhou, Mei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959770/
https://www.ncbi.nlm.nih.gov/pubmed/36837187
http://dx.doi.org/10.3390/ma16041558

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959770/
https://www.ncbi.nlm.nih.gov/pubmed/36837187
http://dx.doi.org/10.3390/ma16041558

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