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Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells

GaN cap layer with different thicknesses was grown on each InGaN well layer during MOCVD growth for InGaN/GaN multiple quantum well (MQW) samples to study the influence of the cap layer on the photoluminescence (PL) characteristics of MQWs. Through the temperature-dependent (TD) PL spectra, it was f...

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Detalles Bibliográficos
Autores principales:	Sun, Haoran, Chen, Yuhui, Ben, Yuhao, Zhang, Hongping, Zhao, Yujie, Jin, Zhihao, Li, Guoqi, Zhou, Mei
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959770/ https://www.ncbi.nlm.nih.gov/pubmed/36837187 http://dx.doi.org/10.3390/ma16041558

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