Influence of O(2) Flow Rate on the Properties of Ga(2)O(3) Growth by RF Magnetron Sputtering

The influence of the O(2) flow rate on the properties of gallium oxide (Ga(2)O(3)) by RF magnetron sputtering was studied. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmittance spectra, and photoluminescence (PL) spectra have been employed to study...

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Detalles Bibliográficos
Autores principales: Li, Dengyue, Sun, Hehui, Liu, Tong, Jin, Hongyan, Li, Zhenghao, Liu, Yaxin, Liu, Donghao, Wang, Dongbo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9960200/
https://www.ncbi.nlm.nih.gov/pubmed/36837960
http://dx.doi.org/10.3390/mi14020260

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9960200/
https://www.ncbi.nlm.nih.gov/pubmed/36837960
http://dx.doi.org/10.3390/mi14020260

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