Influence of O(2) Flow Rate on the Properties of Ga(2)O(3) Growth by RF Magnetron Sputtering

The influence of the O(2) flow rate on the properties of gallium oxide (Ga(2)O(3)) by RF magnetron sputtering was studied. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmittance spectra, and photoluminescence (PL) spectra have been employed to study the Ga(2)O(3) thin films. With the increase in oxygen flow rate, both the crystal quality and luminescence intensity of the Ga(2)O(3) samples first decrease and then enhance. All these observations suggested that the reduction in the oxygen defect density is responsible for the improvement in the crystal quality and emission intensity of the material. Our results demonstrated that high-quality Ga(2)O(3) materials could be obtained by adjusting the oxygen flow rate.