An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding

In this paper, an all-Si resonant pressure microsensor based on eutectic bonding was developed, which can eliminate thermal expansion coefficient mismatches and residual thermal stresses during the bonding process. More specifically, the resonant pressure microsensor included an SOI wafer with a pre...

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Detalles Bibliográficos
Autores principales: Chen, Siyuan, Qin, Jiaxin, Lu, Yulan, Xie, Bo, Wang, Junbo, Chen, Deyong, Chen, Jian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9960247/
https://www.ncbi.nlm.nih.gov/pubmed/36838141
http://dx.doi.org/10.3390/mi14020441

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9960247/
https://www.ncbi.nlm.nih.gov/pubmed/36838141
http://dx.doi.org/10.3390/mi14020441

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