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An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding

In this paper, an all-Si resonant pressure microsensor based on eutectic bonding was developed, which can eliminate thermal expansion coefficient mismatches and residual thermal stresses during the bonding process. More specifically, the resonant pressure microsensor included an SOI wafer with a pre...

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Autores principales: Chen, Siyuan, Qin, Jiaxin, Lu, Yulan, Xie, Bo, Wang, Junbo, Chen, Deyong, Chen, Jian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9960247/
https://www.ncbi.nlm.nih.gov/pubmed/36838141
http://dx.doi.org/10.3390/mi14020441
_version_ 1784895467779260416
author Chen, Siyuan
Qin, Jiaxin
Lu, Yulan
Xie, Bo
Wang, Junbo
Chen, Deyong
Chen, Jian
author_facet Chen, Siyuan
Qin, Jiaxin
Lu, Yulan
Xie, Bo
Wang, Junbo
Chen, Deyong
Chen, Jian
author_sort Chen, Siyuan
collection PubMed
description In this paper, an all-Si resonant pressure microsensor based on eutectic bonding was developed, which can eliminate thermal expansion coefficient mismatches and residual thermal stresses during the bonding process. More specifically, the resonant pressure microsensor included an SOI wafer with a pressure-sensitive film embedded with resonators, which was eutectically bonded with a silicon cap for vacuum encapsulation. The all-Si resonant pressure microsensor was carefully designed and simulated numerically, where the use of the silicon cap was shown to effectively address temperature disturbances of the microsensor. The microsensor was then fabricated based on MEMS processes where eutectic bonding was adopted to link the SOI wafer and the silicon cap. The characterization results showed that the temperature disturbances of the resonant pressure microsensor encapsulated with the silicon cap were quantified as −0.82 Hz/°C of the central resonator and −2.36 Hz/°C of the side resonator within a temperature range from −40 °C to 80 °C, which were at least eight times lower than that of the microsensor encapsulated with the glass cap. Compared with the microsensor using the glass cap, the all-silicon microsensor demonstrated an accuracy improvement from 0.03% FS to 0.01% FS and a reduction in short-term frequency fluctuations from 3.2 Hz to 1.5 Hz.
format Online
Article
Text
id pubmed-9960247
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-99602472023-02-26 An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding Chen, Siyuan Qin, Jiaxin Lu, Yulan Xie, Bo Wang, Junbo Chen, Deyong Chen, Jian Micromachines (Basel) Article In this paper, an all-Si resonant pressure microsensor based on eutectic bonding was developed, which can eliminate thermal expansion coefficient mismatches and residual thermal stresses during the bonding process. More specifically, the resonant pressure microsensor included an SOI wafer with a pressure-sensitive film embedded with resonators, which was eutectically bonded with a silicon cap for vacuum encapsulation. The all-Si resonant pressure microsensor was carefully designed and simulated numerically, where the use of the silicon cap was shown to effectively address temperature disturbances of the microsensor. The microsensor was then fabricated based on MEMS processes where eutectic bonding was adopted to link the SOI wafer and the silicon cap. The characterization results showed that the temperature disturbances of the resonant pressure microsensor encapsulated with the silicon cap were quantified as −0.82 Hz/°C of the central resonator and −2.36 Hz/°C of the side resonator within a temperature range from −40 °C to 80 °C, which were at least eight times lower than that of the microsensor encapsulated with the glass cap. Compared with the microsensor using the glass cap, the all-silicon microsensor demonstrated an accuracy improvement from 0.03% FS to 0.01% FS and a reduction in short-term frequency fluctuations from 3.2 Hz to 1.5 Hz. MDPI 2023-02-13 /pmc/articles/PMC9960247/ /pubmed/36838141 http://dx.doi.org/10.3390/mi14020441 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Chen, Siyuan
Qin, Jiaxin
Lu, Yulan
Xie, Bo
Wang, Junbo
Chen, Deyong
Chen, Jian
An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding
title An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding
title_full An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding
title_fullStr An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding
title_full_unstemmed An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding
title_short An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding
title_sort all-silicon resonant pressure microsensor based on eutectic bonding
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9960247/
https://www.ncbi.nlm.nih.gov/pubmed/36838141
http://dx.doi.org/10.3390/mi14020441
work_keys_str_mv AT chensiyuan anallsiliconresonantpressuremicrosensorbasedoneutecticbonding
AT qinjiaxin anallsiliconresonantpressuremicrosensorbasedoneutecticbonding
AT luyulan anallsiliconresonantpressuremicrosensorbasedoneutecticbonding
AT xiebo anallsiliconresonantpressuremicrosensorbasedoneutecticbonding
AT wangjunbo anallsiliconresonantpressuremicrosensorbasedoneutecticbonding
AT chendeyong anallsiliconresonantpressuremicrosensorbasedoneutecticbonding
AT chenjian anallsiliconresonantpressuremicrosensorbasedoneutecticbonding
AT chensiyuan allsiliconresonantpressuremicrosensorbasedoneutecticbonding
AT qinjiaxin allsiliconresonantpressuremicrosensorbasedoneutecticbonding
AT luyulan allsiliconresonantpressuremicrosensorbasedoneutecticbonding
AT xiebo allsiliconresonantpressuremicrosensorbasedoneutecticbonding
AT wangjunbo allsiliconresonantpressuremicrosensorbasedoneutecticbonding
AT chendeyong allsiliconresonantpressuremicrosensorbasedoneutecticbonding
AT chenjian allsiliconresonantpressuremicrosensorbasedoneutecticbonding