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An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding
In this paper, an all-Si resonant pressure microsensor based on eutectic bonding was developed, which can eliminate thermal expansion coefficient mismatches and residual thermal stresses during the bonding process. More specifically, the resonant pressure microsensor included an SOI wafer with a pre...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9960247/ https://www.ncbi.nlm.nih.gov/pubmed/36838141 http://dx.doi.org/10.3390/mi14020441 |
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author | Chen, Siyuan Qin, Jiaxin Lu, Yulan Xie, Bo Wang, Junbo Chen, Deyong Chen, Jian |
author_facet | Chen, Siyuan Qin, Jiaxin Lu, Yulan Xie, Bo Wang, Junbo Chen, Deyong Chen, Jian |
author_sort | Chen, Siyuan |
collection | PubMed |
description | In this paper, an all-Si resonant pressure microsensor based on eutectic bonding was developed, which can eliminate thermal expansion coefficient mismatches and residual thermal stresses during the bonding process. More specifically, the resonant pressure microsensor included an SOI wafer with a pressure-sensitive film embedded with resonators, which was eutectically bonded with a silicon cap for vacuum encapsulation. The all-Si resonant pressure microsensor was carefully designed and simulated numerically, where the use of the silicon cap was shown to effectively address temperature disturbances of the microsensor. The microsensor was then fabricated based on MEMS processes where eutectic bonding was adopted to link the SOI wafer and the silicon cap. The characterization results showed that the temperature disturbances of the resonant pressure microsensor encapsulated with the silicon cap were quantified as −0.82 Hz/°C of the central resonator and −2.36 Hz/°C of the side resonator within a temperature range from −40 °C to 80 °C, which were at least eight times lower than that of the microsensor encapsulated with the glass cap. Compared with the microsensor using the glass cap, the all-silicon microsensor demonstrated an accuracy improvement from 0.03% FS to 0.01% FS and a reduction in short-term frequency fluctuations from 3.2 Hz to 1.5 Hz. |
format | Online Article Text |
id | pubmed-9960247 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-99602472023-02-26 An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding Chen, Siyuan Qin, Jiaxin Lu, Yulan Xie, Bo Wang, Junbo Chen, Deyong Chen, Jian Micromachines (Basel) Article In this paper, an all-Si resonant pressure microsensor based on eutectic bonding was developed, which can eliminate thermal expansion coefficient mismatches and residual thermal stresses during the bonding process. More specifically, the resonant pressure microsensor included an SOI wafer with a pressure-sensitive film embedded with resonators, which was eutectically bonded with a silicon cap for vacuum encapsulation. The all-Si resonant pressure microsensor was carefully designed and simulated numerically, where the use of the silicon cap was shown to effectively address temperature disturbances of the microsensor. The microsensor was then fabricated based on MEMS processes where eutectic bonding was adopted to link the SOI wafer and the silicon cap. The characterization results showed that the temperature disturbances of the resonant pressure microsensor encapsulated with the silicon cap were quantified as −0.82 Hz/°C of the central resonator and −2.36 Hz/°C of the side resonator within a temperature range from −40 °C to 80 °C, which were at least eight times lower than that of the microsensor encapsulated with the glass cap. Compared with the microsensor using the glass cap, the all-silicon microsensor demonstrated an accuracy improvement from 0.03% FS to 0.01% FS and a reduction in short-term frequency fluctuations from 3.2 Hz to 1.5 Hz. MDPI 2023-02-13 /pmc/articles/PMC9960247/ /pubmed/36838141 http://dx.doi.org/10.3390/mi14020441 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Chen, Siyuan Qin, Jiaxin Lu, Yulan Xie, Bo Wang, Junbo Chen, Deyong Chen, Jian An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding |
title | An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding |
title_full | An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding |
title_fullStr | An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding |
title_full_unstemmed | An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding |
title_short | An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding |
title_sort | all-silicon resonant pressure microsensor based on eutectic bonding |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9960247/ https://www.ncbi.nlm.nih.gov/pubmed/36838141 http://dx.doi.org/10.3390/mi14020441 |
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