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An All-Silicon Resonant Pressure Microsensor Based on Eutectic Bonding
In this paper, an all-Si resonant pressure microsensor based on eutectic bonding was developed, which can eliminate thermal expansion coefficient mismatches and residual thermal stresses during the bonding process. More specifically, the resonant pressure microsensor included an SOI wafer with a pre...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9960247/ https://www.ncbi.nlm.nih.gov/pubmed/36838141 http://dx.doi.org/10.3390/mi14020441 |