Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO(X)/TaN Memristors

In this work, we fabricated an ITO/WO(X)/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (10(4) cycles), a high on/off ratio (>10), and long reten...

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Detalles Bibliográficos
Autores principales: Cho, Youngboo, Kim, Jihyung, Kang, Myounggon, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9961236/
https://www.ncbi.nlm.nih.gov/pubmed/36837316
http://dx.doi.org/10.3390/ma16041687

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9961236/
https://www.ncbi.nlm.nih.gov/pubmed/36837316
http://dx.doi.org/10.3390/ma16041687

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