Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO(X)/TaN Memristors

In this work, we fabricated an ITO/WO(X)/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (10(4) cycles), a high on/off ratio (>10), and long retention (>10(4) s) at room temperature. The conduction mechanism could be explained by Schottky emission conduction. Further, the resistive switching characteristics were performed by additional pulse-signal-based experiments for more practical operation. Lastly, the potentiation/depression characteristics were examined for 10 cycles. The results thus indicate that the WO(X)-based devices are appropriate candidates for synaptic devices as well as next-generation nonvolatile memory.