Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms

GaN high-electron-mobility transistor (HEMT) terahertz (THz) detectors have been widely studied and applied in the past few decades. However, there are few reports about the influence of GaN/AlGaN heterostructure material properties on the detection model at present. In this paper, a response voltag...

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Detalles Bibliográficos
Autores principales: Meng, Qingzhi, Lin, Qijing, Wang, Zelin, Wang, Yangtao, Jing, Weixuan, Xian, Dan, Zhao, Na, Yao, Kun, Zhang, Fuzheng, Tian, Bian, Jiang, Zhuangde
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9961425/
https://www.ncbi.nlm.nih.gov/pubmed/36838999
http://dx.doi.org/10.3390/nano13040632

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9961425/
https://www.ncbi.nlm.nih.gov/pubmed/36838999
http://dx.doi.org/10.3390/nano13040632

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