Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT

The aim of this paper is to model the effects of threading dislocations on both gate and drain currents of AlGaN/GaN high electron mobility transistors (HEMTs). The fraction of filled traps increases with the threading dislocations, while the trapping effects cause a decrease in drain current and an...

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Detalles Bibliográficos
Autores principales: Liu, Censong, Wang, Jie, Chen, Zhanfei, Liu, Jun, Su, Jiangtao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9961690/
https://www.ncbi.nlm.nih.gov/pubmed/36838005
http://dx.doi.org/10.3390/mi14020305

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9961690/
https://www.ncbi.nlm.nih.gov/pubmed/36838005
http://dx.doi.org/10.3390/mi14020305

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