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Simulation of a Steep-Slope p- and n-Type HfS(2)/MoTe(2) Field-Effect Transistor with the Hybrid Transport Mechanism
The use of a two-dimensional (2D) van der Waals (vdW) metal-semiconductor (MS) heterojunction as an efficient cold source (CS) has recently been proposed as a promising approach in the development of steep-slope field-effect transistors (FETs). In addition to the selection of source materials with l...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9961691/ https://www.ncbi.nlm.nih.gov/pubmed/36839017 http://dx.doi.org/10.3390/nano13040649 |