Power Enhancement of 265 nm DUV-LED Flip-Chip by HVPE-AlN High-Temperature Annealing

In this paper, the X-ray diffraction full width at half the maximum (XRD FWHM) of a 3.5 µm-thick hydride vapor phase epitaxy-aluminum nitride (HVPE-AlN) (002) face after high-temperature annealing was reduced to 129 arcsec. The tensile strain in the HVPE-AlN samples gradually released with the incre...

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Detalles Bibliográficos
Autores principales: Yue, Wenkai, Liu, Ruixuan, Li, Peixian, Zhou, Xiaowei, Liu, Yang, Yang, Bo, Liu, Yingxiao, Wang, Xiaowei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9963210/
https://www.ncbi.nlm.nih.gov/pubmed/36838167
http://dx.doi.org/10.3390/mi14020467

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9963210/
https://www.ncbi.nlm.nih.gov/pubmed/36838167
http://dx.doi.org/10.3390/mi14020467

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