Effects of Channel Length Scaling on the Electrical Characteristics of Multilayer MoS(2) Field Effect Transistor

With the rapid miniaturization of integrated chips in recent decades, aggressive geometric scaling of transistor dimensions to nanometric scales has become imperative. Recent works have reported the usefulness of 2D transition metal dichalcogenides (TMDs) like MoS(2) in MOSFET fabrication due to the...

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Detalles Bibliográficos
Autores principales: Radhakrishnan, Sreevatsan, Vishnu, Suggula Naga Sai, Ahmed, Syed Ishtiyaq, Thiruvengadathan, Rajagopalan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9963916/
https://www.ncbi.nlm.nih.gov/pubmed/36837975
http://dx.doi.org/10.3390/mi14020275

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9963916/
https://www.ncbi.nlm.nih.gov/pubmed/36837975
http://dx.doi.org/10.3390/mi14020275

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