Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention of punch-through effects and related drain leakage current un...

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Detalles Bibliográficos
Autores principales: Harrouche, Kathia, Venkatachalam, Srisaran, Ben-Hammou, Lyes, Grandpierron, François, Okada, Etienne, Medjdoub, Farid
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9964327/
https://www.ncbi.nlm.nih.gov/pubmed/36837991
http://dx.doi.org/10.3390/mi14020291

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9964327/
https://www.ncbi.nlm.nih.gov/pubmed/36837991
http://dx.doi.org/10.3390/mi14020291

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